Toyoda Gosei’s GaN Substrate Technology Boosts Power Device Performance

Toyoda Gosei Co ( (JP:7282) ) has shared an announcement.

Toyoda Gosei has achieved a significant breakthrough in enhancing power device performance using their GaN substrate technology, which was verified in an international scientific journal. This development, part of a larger initiative led by the Japanese Ministry of the Environment, demonstrates improved power regulation capacity and yield ratio for devices made with GaN substrates over those made with commercially-available options. This advancement supports CO2 reduction goals and highlights Toyoda Gosei’s role in promoting energy-efficient solutions.

More about Toyoda Gosei Co

Toyoda Gosei Co., Ltd. is a company involved in the electronics industry, focusing on the development and manufacturing of gallium nitride (GaN) substrates and power devices. Their technology is crucial for achieving energy efficiency and supporting the transition from silicon to GaN materials, which allows for significant energy savings. The company collaborates with government bodies, universities, and other corporations to enhance the quality and application of GaN technology.

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